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| DSEP 2x 101-04A HiPerFREDTM Epitaxial Diode with soft recovery IFAV = 2x 100 A VRRM = 400 V trr = 30 ns miniBLOC, SOT-227 B VRSM V 400 VRRM V 400 Type DSEP 2x 101-04A D4 Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL Md Weight TC = 25C 50/60 Hz, RMS IISOL 1 mA mounting torque (M4) terminal connection torque (M4) typical Conditions TC = 60C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 4 A; L = 180 H VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 100 100 1000 2 0.4 -40...+150 150 -40...+150 200 2500 1.1-1.5/9-13 1.1-1.5/9-13 30 A A A mJ A C C C W V~ Nm/lb.in. Nm/lb.in. g Features International standard package miniBLOC Isolation voltage 2500 V~ UL registered E 72873 2 independent FRED in 1 package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Applications Symbol IR Conditions VR = VRRM; TVJ = 25C TVJ = 150C IF = 100 A; TVJ = 125C TVJ = 25C Characteristic Values typ. max. 1 4 1.24 1.54 0.6 0.1 30 5.5 6.8 mA mA V V K/W K/W ns A VF RthJC RthCH trr IRM Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders with heatsink compound IF = 1 A; -di/dt = 400 A/s; VR = 30 V; TVJ = 25C VR = 100 V; IF = 200 A; -diF/dt = 100 A/s TVJ = 100C Advantages Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Pulse Width = 300 s, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions. Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see Outlines.pdf 313 (c) 2003 IXYS All rights reserved 1-2 DSEP 2x 101-04A 300 A 250 IF 200 150 100 50 0 0.0 TVJ = 150C TVJ = 100C TVJ = 25C 2400 nC 2000 Qr 1600 1200 800 400 TVJ = 100C VR = 200 V IRM IF = 200 A IF = 100 A IF = 50 A 50 A 40 IF = 200 A IF = 100 A IF = 50 A TVJ = 100C VR = 200 V 30 20 10 0.5 1.0 1.5 VF 2.0 V 2.5 0 100 0 A/s 1000 -diF/dt 0 200 400 600 A/s 1000 800 -diF/dt Fig. 1 Forward current IF versus VF Fig. 2 Typ. reverse recovery charge Qr versus -diF/dt 160 ns TVJ = 100C VR = 200 V Fig. 3 Typ. peak reverse current IRM versus -diF/dt 60 V 50 VFR 40 30 20 tfr TVJ = 100C IF = 100 A 1.50 s 1.25 tfr 1.00 0.75 0.50 0.25 0.00 600 A/s 1000 800 diF/dt 2.0 1.5 Kf trr 140 IF = 200 A IF = 100 A IF = 50 A 120 1.0 100 IRM 0.5 Qr 0.0 0 40 80 120 C 160 TVJ 80 10 0 0 200 400 600 -diF/dt 800 A/s 1000 0 VFR 200 400 60 Fig. 4 Typ. dynamic parameters Qr, IRM versus TVJ 1 K/W 0.1 ZthJC 0.01 Fig. 5 Typ. recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 4 Rthi (K/W) 0.212 0.248 0.063 0.077 ti (s) 0.0055 0.0092 0.0007 0.0391 0.001 0.0001 0.0001 DSEP 2x101-04A 0.001 0.01 0.1 1 t s 10 Fig. 7 Transient thermal resistance junction to case 313 2-2 (c) 2003 IXYS All rights reserved |
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